High-side driver for 135V rails
The LTC7000HMSE-1#PBF is a single-channel high-side N-channel MOSFET gate driver from Analog Devices, designed to drive the gate of an external N-channel FET referenced to a floating bootstrap supply up to 135 V. Supply voltage spans 3.5 V to 135 V, covering 12 V, 24 V, 48 V, and 72 V nominal rails with margin for transients — the bootstrap diode and cap are internal, so the only external components are the hold-up capacitor and the MOSFET itself. Rise and fall times are 90 ns and 40 ns typical respectively, fast enough to switch a large gate-charge FET without excessive cross-conduction loss in the dead-time window.
Logic-level input with 1.8V threshold
Compared to the industrial-temperature sibling LTC7000IMSE-1#PBF which is rated to 125°C junction, the HMSE-1 variant extends the operating envelope by 25°C — the switching performance and pinout are identical, so a board designed for the IMSE-1 accepts the HMSE-1 without layout changes.
Active production, RoHS3, and sourcing
RoHS3 compliant (2015/863/EU) with no exemptions — the part ships in tubes, and the MSL level is stated on the label; bake before reflow if the floor life has been exceeded.