NVSRAM technology — SRAM speed with battery-backed retention
The DS1225AD-85+: This is a Non-Volatile SRAM (NVSRAM) — it combines the fast read/write cycle of a standard SRAM (85 ns access time, 85 ns write cycle) with an integrated lithium energy cell that retains the memory contents when the main supply is removed. No external battery, no EEPROM write-cycle wear, and no data-loss during power transitions. The memory is organized as 8K x 8 bits (64Kbit total) with a parallel interface.
28-pin EDIP footprint — legacy through-hole, direct socket replacement
Housed in a 28-pin EDIP (600-mil wide, 0.100-inch pitch) through-hole module. The EDIP is the standard footprint for this class of NVSRAM — it drops into existing sockets on boards designed for the Dallas Semiconductor/Maxim DS1225 series. The supplier device package (28-EDIP) matches the industry-standard pinout for 8K x 8 NVSRAMs. Shipping in Tube packaging — typical for through-hole DIP modules. No tape-and-reel option; this is a manual-insertion part for through-hole assembly lines or rework benches.
ROHS3 compliant (2015/863/EU) — no lead, mercury, cadmium, or restricted phthalates. No RoHS exemption is required for this part, so it ships freely into EU-regulated markets without documentation overhead. Availability and current pricing confirmed at RFQ time.