Analog Devices DS1220AD-120+ — DC-DC Power Modules
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RoHS Compliant · Lead-Free EIA-481 Standard
Analog Devices / DC-DC Power Modules

DS1220AD-120+ NVSRAM, 16Kbit, 120 ns, Parallel, 24-EDIP

MPN DS1220AD-120+
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

Maxim Integrated DS1220AD-120+, NVSRAM, 16Kbit (2K x 8), Parallel Interface, 120 ns Access Time, 4.5V ~ 5.5V Supply, 0°C ~ 70°C, Through Hole, 24-EDIP.

In Stock: 109 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$16.49 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$16.49
10+ pcs
$14.84
30+ pcs
$13.52
100+ pcs
$12.20
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$16.49 / ea

109 in stock — maximum per order · 3–4 days lead time

$14.84 / ea from 10 pcs

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[SPEC] Essential Parameters Snapshot Full Specifications (13)
Package / Case 24-DIP Module (0.600", 15.24mm)
Supply Voltage 4.5V ~ 5.5V
Memory / RAM 16Kbit

Full Technical Specifications

13 Parameters
DS1220AD-120+ specifications
Parameter / AttributeSpecification / Value
Memory typeNon-Volatile
MountingThrough Hole
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTube
TechnologyNVSRAM (Non-Volatile SRAM)
Access time120 ns
Memory size16Kbit
Memory formatNVSRAM
Case24-DIP Module (0.600\", 15.24mm)
Memory organization2K x 8
Write cycle time - word, page120ns
[DESK] Shenzhen Spot Allocation · 2h Response

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[01] Emergency Shortage 24-48h Shenzhen Dispatch

Direct access to Shenzhen floor inventory, franchised allocation buffers, and factory bonded stock to resolve line-down shutdowns.

[02] Industrial Packaging Tape & Reel / Tray / Tube

Standard factory-sealed packaging compliant with EIA-481 standards for automated high-speed SMT pick-and-place lines.

[03] WhatsApp QC Proof 45x Microscope QC Photos

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Technical Details & Description

The Maxim Integrated DS1220AD-120+ is a 16Kbit non-volatile SRAM (NVSRAM) organized as 2K x 8 bits, with a parallel interface and a 120 ns access time. It combines the fast read/write cycle of a standard SRAM with internal lithium energy cells that preserve data when the supply drops — no external battery or controller needed. The part is housed in a 24-pin EDIP (0.600-inch, 15.24 mm pitch) and operates from a 4.5 V to 5.5 V supply over the commercial temperature range of 0°C to 70°C.

120 ns access time — timing for legacy buses

NVSRAM vs battery-backed SRAM — no battery replacement

Unlike conventional battery-backed SRAM modules that use a replaceable coin cell, the DS1220AD-120+ integrates non-volatile elements that store data without a user-serviceable battery. The internal lithium cells are sealed and rated for the life of the product. This eliminates scheduled battery swaps and the risk of data loss from a depleted cell.

The part is also ROHS3 compliant.

Frequently asked questions

What is the access time of DS1220AD-120+?

The DS1220AD-120+ has a 120 ns access time, which also applies to the write cycle.

Does DS1220AD-120+ have a built-in battery?

Yes, the DS1220AD-120+ integrates internal lithium energy cells for non-volatile data retention. These are sealed and not user-replaceable.

Is DS1220AD-120+ RoHS compliant?

Yes, the DS1220AD-120+ is ROHS3 compliant.

DS1220AD-120+
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