Active production — 16 Kbit NVSRAM for 5 V legacy buses
The DS1220AB-200+ is an active-production NVSRAM from Analog Devices, organized as 2K x 8 bits with a parallel interface and 200 ns access time. The 200 ns write cycle time (word/page) matches the read access, so bus timing is symmetrical — no separate wait-state budget for writes.
NVSRAM technology — no wear-leveling, no erase cycles
Unlike EEPROM or flash, NVSRAM combines SRAM read/write speed with internal lithium backup for non-volatility — data retention does not depend on erase cycles or wear-leveling algorithms. The 16 Kbit capacity in a 2K x 8 organization suits parameter storage, calibration tables, or boot configuration data that must survive power loss without write endurance limits.
24-pin EDIP — through-hole footprint for retrofit or low-volume builds
Housed in a 24-pin DIP module with 0.600-inch body width (24-EDIP), the DS1220AB-200+ uses a through-hole mounting style that simplifies hand assembly and rework. The EDIP package integrates the SRAM die and backup battery in a single sealed module — no external battery holder or charging circuit needed on the PCB. Supplied in tube packaging, suitable for low-to-medium volume production or bench prototyping without reel handling.
ROHS3 compliant (no exemption-based restrictions), simplifying compliance for EU and global BOMs.