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Vishay SIHP23N60E-BE3 — Discrete Semiconductors

Vishay SIHP23N60E-BE3 N-Channel MOSFET, 600V, 23A, TO-220-3

MPNSIHP23N60E-BE3
End of Life

Vishay E Series N-Channel MOSFET, SIHP23N60E-BE3, 600 V, 23 A, 158 mOhm, TO-220-3, Tube.

$3.3Ref. price · indicative, final on quote
PackagingTO-220-3
StockIn Stock (16)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SIHP23N60E-BE3 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C23A (Tc)
Power dissipation227W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs158mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs95 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2418 pF @ 100 V

Product details

Parametric fit for hard-switched converters

With a Vgs threshold of 4 V maximum at 250 µA, the part requires a 10 V drive for the lowest Rds(on) — standard for a 600 V class MOSFET. Input capacitance is 2418 pF at 100 V Vds, a moderate figure that allows reasonable switching speeds without excessive driver peak current. Against the SIHP22N60AE-BE3 (20 A, 180 mOhm), the SIHP23N60E-BE3 delivers 3 A more headroom and lower on-resistance in the same TO-220-3 footprint — a direct drop-in upgrade without board changes.

Supplied in tube packaging (standard for TO-220-3 through-hole assembly).

Frequently asked questions

Will SIHP23N60E-BE3 drop into a board designed for SIHP22N60AE-BE3?

Yes — both parts share the same TO-220-3 footprint and pinout. The SIHP23N60E-BE3 offers higher current rating (23 A vs 20 A) and lower Rds(on) (158 mOhm vs 180 mOhm), so it is a direct electrical and mechanical upgrade.