Vishay SIC645AER-T1-GE3 — Microcontrollers & Processors (MCU / MPU / DSP)
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RoHS Compliant · Lead-Free EIA-481 Standard
Vishay / Microcontrollers & Processors (MCU / MPU / DSP)

SIC645AER-T1-GE3 VRPower® Half-Bridge Driver, 0.76mΩ LS

MPN SIC645AER-T1-GE3
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

Vishay VRPower® SIC645AER-T1-GE3 half-bridge NMOS driver, 0.76mΩ low-side and 3.6mΩ high-side Rds(on), PWM interface, bootstrap circuit, fault protection, 32-PowerWFQFN PowerPAK® MLP55-32 Double Cooling package, -40°C to 125°C junction temperature.

In Stock: 6 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$6.22 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$6.22
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$6.22 / ea

6 in stock — maximum per order · 3–4 days lead time

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[SPEC] Essential Parameters Snapshot Full Specifications (15)
Package / Case 32-PowerWFQFN
Supply Voltage 4.75 ~ 5.25V
Output / Current 0.76mOhm LS, 3.6mOhm HS

Full Technical Specifications

15 Parameters
SIC645AER-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesVRPower®
Load typeInductive
MountingSurface Mount
Voltage - load4.5V ~ 18V
Supply voltage4.75 ~ 5.25V
InterfacePWM
Operating temperature-40°C ~ 125°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FeaturesBootstrap Circuit, Status Flag
TechnologyNMOS
ApplicationsSynchronous Buck Converters, Voltage Regulators
Rds on0.76mOhm LS, 3.6mOhm HS
Case32-PowerWFQFN
Fault protectionCurrent Limiting, Over Temperature, Shoot-Through, UVLO
Output configurationHalf Bridge
Series Sibling Variants

Vishay VRPower® Series Models

Sibling variants, package options, and speed/density grades in this Vishay semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

Technical Details & Description

Half-bridge driver for high-current synchronous buck converters

The Vishay SIC645AER-T1-GE3 is a VRPower® half-bridge NMOS driver designed for synchronous buck converters and voltage regulators. It integrates a bootstrap circuit and status flag, and uses a PWM interface to drive inductive loads. The low-side Rds(on) is typically 0.76mΩ and the high-side is 3.6mΩ, which keeps conduction losses low in high-current rails. The device operates from a 4.5V to 18V load voltage and requires a 4.75V to 5.25V supply for the internal gate drive. Fault protection includes current limiting, over-temperature, shoot-through, and UVLO, reducing the need for external supervisory components.

Thermal and package considerations for layout

The SIC645AER-T1-GE3 is housed in a 32-PowerWFQFN package with a PowerPAK® MLP55-32 Double Cooling exposed pad. This dual-cooling footprint is designed to pull heat from both the top and bottom of the package, which matters when the part is delivering tens of amps through the low-side FET. Without that via stitch, junction temperature will rise faster than the 125°C rating allows under continuous high load. The package is surface-mount only, so reflow profile and solder paste coverage on the pad area are critical for both electrical connection and thermal performance.

It is ROHS3 compliant.

Frequently asked questions

Where can I buy SIC645AER-T1-GE3?

Submit an RFQ to confirm current availability and pricing for your quantity and delivery timeline.

What is the SIC645AER-T1-GE3 used for?

This half-bridge NMOS driver is designed for synchronous buck converters and voltage regulators, typically in point-of-load power supplies for computing, networking, and telecom equipment where high efficiency at high current is required.

SIC645AER-T1-GE3
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