SI2301BDS-T1-GE3
Vishay Siliconix
TrenchFET®Tape & Reel (TR); Cut Tape (CT)-55°C~150°C(TJ)
Ref. price$0.5200
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Vishay Siliconix SI230 Series
26 variants · Vishay Siliconix
About the Vishay Siliconix SI230 Series
The Vishay Siliconix SI230 Series series groups 26 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of TO-236-3, SC-59, SOT-23-3, FET feature of - and mounting of Surface Mount. Variants differ by current - continuous drain (Id) @ 25°C, drain to source voltage and drive voltage (Max rds on, min rds on), so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below. The range mixes active and legacy part numbers, so you can source both current Vishay Siliconix SI230 Series variants and discontinued ones from a single page.
Select a variant by
- Current - continuous drain (Id) @ 25°C
- 1.9A (Ta), 2.3A (Tc) · 2.2A (Ta) · 2.3A (Tc) · 2.6A (Ta) · 2.6A (Tc) · 2.9A (Tj) · 3.1A (Ta), 3.6A (Tc) · 3.1A (Tc) · 3.6A (Tc)
- Drain to source voltage
- 20 V · 30 V · 60 V
- Drive voltage (Max rds on, min rds on)
- 2.5V, 4.5V · 4.5V, 10V
- FET type
- N-Channel · P-Channel
- Gate charge (Qg) (Max) @ vgs
- 4 nC @ 10 V · 5.5 nC @ 4.5 V · 6.8 nC @ 10 V · 10 nC @ 4.5 V · 10 nC @ 10 V
- Operating temperature
- -55°C ~ 150°C (TJ) · -55°C~150°C(TJ)
- Package
- Tape & Reel (TR) Cut Tape (CT) · Tape & Reel (TR); Cut Tape (CT)
- Power dissipation
- 1.09W (Ta), 1.66W (Tc) · 1.1W (Ta), 1.7W (Tc) · 1.6W (Tc) · 700mW (Ta) · 710mW (Ta) · 860mW (Ta), 1.6W (Tc)
Shared specifications
- Case
- TO-236-3, SC-59, SOT-23-3
- FET feature
- -
- Mounting
- Surface Mount
- Technology
- MOSFET (Metal Oxide)
Variant comparison
| Parameter | SI2301BDS-T1-GE3 | SI2301CDS-T1-E3 | SI2301CDS-T1-GE3 | SI2302CDS-T1-GE3 | SI2302DDS-T1-GE3 | SI2308BDS-T1-BE3 |
|---|---|---|---|---|---|---|
| Current - continuous drain (Id) @ 25°C | 2.2A (Ta) | 3.1A (Tc) | 3.1A (Tc) | 2.6A (Ta) | 2.9A (Tj) | 1.9A (Ta), 2.3A (Tc) |
| Drain to source voltage | 20 V | 20 V | 20 V | 20 V | 20 V | 60 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V | 4.5V, 10V |
| FET type | P-Channel | P-Channel | P-Channel | N-Channel | N-Channel | N-Channel |
| Gate charge (Qg) (Max) @ vgs | 10 nC @ 4.5 V | 10 nC @ 4.5 V | 10 nC @ 4.5 V | 5.5 nC @ 4.5 V | 5.5 nC @ 4.5 V | 6.8 nC @ 10 V |
| Operating temperature | -55°C~150°C(TJ) | -55°C~150°C(TJ) | -55°C~150°C(TJ) | -55°C~150°C(TJ) | -55°C~150°C(TJ) | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) | Tape & Reel (TR); Cut Tape (CT) | Tape & Reel (TR); Cut Tape (CT) | Tape & Reel (TR); Cut Tape (CT) | Tape & Reel (TR); Cut Tape (CT) | Tape & Reel (TR); Cut Tape (CT) |
| Power dissipation | 700mW (Ta) | 860mW (Ta), 1.6W (Tc) | 860mW (Ta), 1.6W (Tc) | 710mW (Ta) | 710mW (Ta) | 1.09W (Ta), 1.66W (Tc) |
Request a quote on any Vishay Siliconix SI230 Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.
