Vishay Siliconix SI2305DS-T1-E3
MPNSI2305DS-T1-E3
Obsolete
$0.1400Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 8 V |
| Current - continuous drain (Id) @ 25°C | 3.5A (Ta) |
| Package | Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 800mV @ 250µA |
| Rds on (Max) @ id, vgs | 52mOhm @ 3.5A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1245 pF @ 4 V |