Vishay Siliconix SI2305CDS-T1-GE3
MPNSI2305CDS-T1-GE3
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$0.4700Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 8 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 5.8A (Tc) |
| Power dissipation | 960mW (Ta), 1.7W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 35mOhm @ 4.4A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 8 V |
| Input capacitance (Ciss) (Max) @ vds | 960 pF @ 4 V |