SI2300DS-T1-BE3

Vishay Siliconix

Vishay Siliconix SI2300DS-T1-BE3
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI2300DS-T1-BE3 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C3.1A (Ta), 3.6A (Tc)
Power dissipation1.1W (Ta), 1.7W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs68mOhm @ 2.9A, 4.5V
Gate charge (Qg) (Max) @ vgs10 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds320 pF @ 15 V
SI2300DS-T1-BE3
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