Vishay Siliconix SI2308BDS-T1-BE3
MPNSI2308BDS-T1-BE3
Active
N-CHANNEL 60-V (D-S) MOSFET
$0.5600Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 1.9A (Ta), 2.3A (Tc) |
| Power dissipation | 1.09W (Ta), 1.66W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 156mOhm @ 1.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 190 pF @ 30 V |