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Vishay Siliconix SI2302ADS-T1 — Discrete Semiconductors

Vishay Siliconix SI2302ADS-T1

MPNSI2302ADS-T1
Obsolete
$0.5200Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI2302ADS-T1 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C2.1A (Ta)
Power dissipation700mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.2V @ 50µA
Rds on (Max) @ id, vgs60mOhm @ 3.6A, 4.5V
Gate charge (Qg) (Max) @ vgs10 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds300 pF @ 10 V