SI2301BDS-T1-E3
Vishay Siliconix
[QUOTE] Factory Allocation · Direct Sourcing
Target price / quote
Volume pricing available from 1,000+ pcs per order.
MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 2.2A (Ta) |
| Power dissipation | 700mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 950mV @ 250µA |
| Rds on (Max) @ id, vgs | 100mOhm @ 2.8A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 10 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 375 pF @ 6 V |
SI2301BDS-T1-E3
[ALLOC] verified