Vishay Siliconix SI2301BDS-T1-E3
MPNSI2301BDS-T1-E3
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$0.5900Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 2.2A (Ta) |
| Power dissipation | 700mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 950mV @ 250µA |
| Rds on (Max) @ id, vgs | 100mOhm @ 2.8A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 10 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 375 pF @ 6 V |