
Vishay Siliconix IRF640PBF
MOSFET N-CH 200V 18A TO220AB
$1.60 / ea
2 in stock — maximum per order · 3–4 days lead time
Full Technical Specifications
15 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 18A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 180mOhm @ 11A, 10V |
| Gate charge (Qg) (Max) @ vgs | 70 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1300 pF @ 25 V |
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