UMW SI2310A — Discrete Semiconductors
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UMW / Discrete Semiconductors

SI2310A - UMW

MPN SI2310A
Active Spot Stock · 24-48h Dispatch 100% Original Sealed

60V 3A 90MR@10V,3A 1.38W 3V@250A

In Stock: 37,210 pcs
MOQ: 20 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
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200+ pcs
$0.04
600+ pcs
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21,000+ pcs
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37,210 in stock — maximum per order · MOQ 20 · 3–4 days lead time

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[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case TO-236-3, SC-59, SOT-23-3
Output / Current 60 V

Full Technical Specifications

16 Parameters
SI2310A specifications
Parameter / AttributeSpecification / Value
SeriesUMW
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C3A (Ta)
Power dissipation1.38W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs80mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds780 pF @ 25 V
Series Sibling Variants

UMW UMW Series Models

Sibling variants, package options, and speed/density grades in this UMW semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

SI2310A
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