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UMW 1N60L — Discrete Semiconductors

UMW 1N60L

MPN1N60L
Active

TO-252 N-CHANNEL POWER MOSFET

$0.5700Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesUMW
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N60L specifications
ParameterValue
SeriesUMW
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1A (Tj)
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs11Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs4.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds150 pF @ 25 V