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ROHM Semiconductor RQ7G080BGTCR

RQ7G080BGTCR - ROHM Semiconductor

MPNRQ7G080BGTCR
End of Life

NCH 40V 8A, TSMT8, POWER MOSFET

$1.06Ref. price · indicative, final on quote
Packaging8-SMD, Flat Lead
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RQ7G080BGTCR specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8A (Ta)
Power dissipation1.1W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SMD, Flat Lead
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs16.5mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs10.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds530 pF @ 20 V