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ROHM Semiconductor R6507KNXC7G — DC-DC Power Modules

ROHM Semiconductor R6507KNXC7G

MPNR6507KNXC7G
End of Life

650V 7A TO-220FM, HIGH-SPEED SWI

$2.26Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

R6507KNXC7G specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Ta)
Power dissipation46W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 200µA
Rds on (Max) @ id, vgs665mOhm @ 2.4A, 10V
Gate charge (Qg) (Max) @ vgs14.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds470 pF @ 25 V