ROHM Semiconductor IMZ1AT108 — Memory (DRAM / SRAM / Flash / EEPROM)
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ROHM Semiconductor / Memory (DRAM / SRAM / Flash / EEPROM)

IMZ1AT108 NPN/PNP Dual Transistor, 50V 150mA SMT6

MPN IMZ1AT108
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ROHM Semiconductor IMZ1AT108 dual NPN/PNP small-signal transistor, 50V Vceo, 150mA Ic, 180/140MHz fT, 300mW, SC-74 SOT-457 SMT6 package.

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135 in stock — maximum per order · MOQ 10 · 3–4 days lead time

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[SPEC] Essential Parameters Snapshot Full Specifications (12)
Package / Case SC-74, SOT-457

Full Technical Specifications

12 Parameters
IMZ1AT108 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN, PNP
Voltage - collector emitter breakdown50V
Current - collector (Ic)150mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 6V
Power - max300mW
Frequency - transition180MHz, 140MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-74, SOT-457
Vce saturation (Max) @ ib, ic400mV @ 5mA, 50mA, 500mV @ 5mA, 50mA
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Technical Details & Description

Dual NPN/PNP in a single SMT6 package

The ROHM IMZ1AT108 packs one NPN and one PNP small-signal transistor into a single SC-74 (SOT-457) surface-mount package, saving board space compared to two discrete SOT-23s. Each transistor is rated for a 50V collector-emitter breakdown and 150mA continuous collector current, making it a fit for low-power signal switching, level translation, and pre-driver stages in 24V or 48V industrial and consumer designs.

Key ratings at a glance

The NPN side transitions at 180MHz, the PNP at 140MHz — enough for moderate-speed switching up to a few megahertz, but not for RF. Vce saturation is specified at 400mV (NPN) and 500mV (PNP) at 5mA base, 50mA collector — low enough to keep dissipation manageable in a 300mW package. Collector cutoff current is 100nA max, so leakage won't be an issue in high-impedance nodes at room temperature.

Surface-mount only, in the SC-74 / SOT-457 outline with six leads.

Frequently asked questions

What is the hFE range of IMZ1AT108?

The minimum DC current gain (hFE) is 120 at 1mA collector current and 6V Vce. The datasheet typical range extends higher, but only the 120 minimum is specified in the standard listing.

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