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onsemi FQP2N80

onsemi FQP2N80

MPNFQP2N80
End of Life

MOSFET N-CH 800V 2.4A TO220-3

$0.67Ref. price · indicative, final on quote
PackagingTO-220-3
SeriesQFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQP2N80 specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.4A (Tc)
Power dissipation85W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs6.3Ohm @ 1.2A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds550 pF @ 25 V