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onsemi FQI8N60CTU
MPN FQI8N60CTU
End of Life
Spot Stock · 24-48h Dispatch
100% Original Sealed
POWER FIELD-EFFECT TRANSISTOR, 7
In Stock: 6,000 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d)
Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$1.09 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$1.09
10+ pcs
$0.98
30+ pcs
$0.89
100+ pcs
$0.81
500+ pcs
$0.75
1,000+ pcs
$0.71
Working on a production BOM or have a target unit price? Submit Target Price
[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Output / Current 600 V
Full Technical Specifications
16 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| Series | QFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7.5A (Tc) |
| Power dissipation | 3.13W (Ta), 147W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.2Ohm @ 3.75A, 10V |
| Gate charge (Qg) (Max) @ vgs | 36 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1255 pF @ 25 V |
Series Sibling Variants
onsemi QFET® Series Models
Sibling variants, package options, and speed/density grades in this onsemi semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.
FQA13N50C-F109
MOSFET N-CH 500V 13.5A TO3P
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FQA13N80-F109
MOSFET N-CH 800V 12.6A TO3PN
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FQA24N60
MOSFET N-CH 600V 23.5A TO3PN
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FQA32N20C
POWER FIELD-EFFECT TRANSISTOR, 3
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FQA40N25
MOSFET N-CH 250V 40A TO3PN
View Availability & Specs
FQA70N10
MOSFET N-CH 100V 70A TO3PN
View Availability & Specs
FQI8N60CTU
Verified Allocation