Infineon Technologies ISC0 Discrete Semiconductors Series

6 variants · Infineon TechnologiesAll Discrete Semiconductors →

About the Infineon Technologies ISC0 Discrete Semiconductors Series

The Infineon Technologies ISC0 Discrete Semiconductors Series series groups 6 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of 8-PowerTDFN, FET type of N-Channel and mounting of Surface Mount. Variants differ by current - continuous drain (Id) @ 25°C, drain to source voltage and drive voltage (Max rds on, min rds on), so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below. All listed Infineon Technologies ISC0 Discrete Semiconductors Series part numbers are active and orderable.

Select a variant by

Current - continuous drain (Id) @ 25°C: 13A (Ta), 75A (Tc) · 21A (Ta), 179A (Tc) · 23A (Ta), 192A (Tc) · 25A (Ta), 230A (Tc) · 37A (Ta), 238A (Tc) · 37A (Ta), 288A (Tc)
Drain to source voltage: 40 V · 60 V · 100 V
Drive voltage (Max rds on, min rds on): 4.5V, 10V · 8V, 10V
Gate charge (Qg) (Max) @ vgs: 24 nC @ 10 V · 64 nC @ 10 V · 69 nC @ 10 V · 72.5 nC @ 10 V · 91 nC @ 10 V · 170 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds: 1800 pF @ 50 V · 4600 pF @ 20 V · 5200 pF @ 50 V · 5500 pF @ 50 V · 6880 pF @ 50 V · 11000 pF @ 30 V
Power dissipation: 3W (Ta), 100W (Tc) · 3W (Ta), 125W (Tc) · 3W (Ta), 188W (Tc) · 3W (Ta), 208W (Tc) · 3W (Ta), 217W (Tc) · 3W (Ta), 254W (Tc)
Rds on (Max) @ id, vgs: 1.15mOhm @ 50A, 10V · 1.2mOhm @ 50A, 10V · 2.24mOhm @ 50A, 10V · 2.7mOhm @ 50A, 10V · 3mOhm @ 50A, 10V · 8.05mOhm @ 20A, 10V

Shared specifications

Case: 8-PowerTDFN
FET type: N-Channel
Mounting: Surface Mount
Operating temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR); Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Vgs: ±20V

Variant comparison

Parameter	ISC011N06LM5ATMA1	ISC012N04LM6ATMA1	ISC022N10NM6ATMA1	ISC027N10NM6ATMA1	ISC030N10NM6ATMA1	ISC080N10NM6ATMA1
Current - continuous drain (Id) @ 25°C	37A (Ta), 288A (Tc)	37A (Ta), 238A (Tc)	25A (Ta), 230A (Tc)	23A (Ta), 192A (Tc)	21A (Ta), 179A (Tc)	13A (Ta), 75A (Tc)
Drain to source voltage	60 V	40 V	100 V	100 V	100 V	100 V
Drive voltage (Max rds on, min rds on)	4.5V, 10V	4.5V, 10V	8V, 10V	8V, 10V	8V, 10V	8V, 10V
Gate charge (Qg) (Max) @ vgs	170 nC @ 10 V	64 nC @ 10 V	91 nC @ 10 V	72.5 nC @ 10 V	69 nC @ 10 V	24 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds	11000 pF @ 30 V	4600 pF @ 20 V	6880 pF @ 50 V	5500 pF @ 50 V	5200 pF @ 50 V	1800 pF @ 50 V
Power dissipation	3W (Ta), 188W (Tc)	3W (Ta), 125W (Tc)	3W (Ta), 254W (Tc)	3W (Ta), 217W (Tc)	3W (Ta), 208W (Tc)	3W (Ta), 100W (Tc)
Rds on (Max) @ id, vgs	1.15mOhm @ 50A, 10V	1.2mOhm @ 50A, 10V	2.24mOhm @ 50A, 10V	2.7mOhm @ 50A, 10V	3mOhm @ 50A, 10V	8.05mOhm @ 20A, 10V

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