Infineon Technologies · OptiMOS™ 6 Series
Infineon OptiMOS™ 6 N-Channel MOSFET, ISC030N10NM6ATMA1, 100 V drain-source, 3 mOhm Rds(on) max at 50 A, 179 A continuous drain, 8-PowerTDFN package, -55°C to 175°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ 6 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 8V, 10V |
| Current - continuous drain (Id) @ 25°C | 21A (Ta), 179A (Tc) |
| Power dissipation | 3W (Ta), 208W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.3V @ 109µA |
| Rds on (Max) @ id, vgs | 3mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 69 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5200 pF @ 50 V |
The Infineon ISC030N10NM6ATMA1 is a 100 V N-channel MOSFET from the OptiMOS 6 trench family, built for low conduction loss in a compact 8-PowerTDFN package. The headline rating is a maximum on-resistance of 3 mOhm at a 50 A drain current with a 10 V gate drive. Gate drive is specified for an 8 V to 10 V window to achieve the minimum Rds(on).
