What this 100 V OptiMOS 6 FET delivers
The Infineon ISC030N10NM6ATMA1 is a 100 V N-channel MOSFET from the OptiMOS 6 trench family, built for low conduction loss in a compact 8-PowerTDFN package. The headline rating is a maximum on-resistance of 3 mOhm at a 50 A drain current with a 10 V gate drive. Gate drive is specified for an 8 V to 10 V window to achieve the minimum Rds(on).
