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Infineon Technologies ISC030N10NM6ATMA1 — Discrete Semiconductors
Infineon Technologies

Infineon ISC030N10NM6ATMA1 OptiMOS 6 N-Channel MOSFET, 100V

MPNISC030N10NM6ATMA1
End of Life

Infineon OptiMOS™ 6 N-Channel MOSFET, ISC030N10NM6ATMA1, 100 V drain-source, 3 mOhm Rds(on) max at 50 A, 179 A continuous drain, 8-PowerTDFN package, -55°C to 175°C junction temperature.

$3.29Ref. price · indicative, final on quote
ISC030N10NM6ATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

ISC030N10NM6ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™ 6
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)8V, 10V
Current - continuous drain (Id) @ 25°C21A (Ta), 179A (Tc)
Power dissipation3W (Ta), 208W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.3V @ 109µA
Rds on (Max) @ id, vgs3mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs69 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5200 pF @ 50 V

Product details

What this 100 V OptiMOS 6 FET delivers

The Infineon ISC030N10NM6ATMA1 is a 100 V N-channel MOSFET from the OptiMOS 6 trench family, built for low conduction loss in a compact 8-PowerTDFN package. The headline rating is a maximum on-resistance of 3 mOhm at a 50 A drain current with a 10 V gate drive. Gate drive is specified for an 8 V to 10 V window to achieve the minimum Rds(on). Total gate charge is 69 nC at 10 V, which is moderate for a 100 V part at this current level — a standard gate driver with a few amps of peak current will switch it cleanly at tens of kilohertz. Input capacitance is 5200 pF at 50 V drain-source, so the driver sees a moderate capacitive load; keep the gate loop tight to avoid ringing. The junction temperature range spans -55°C to 175°C, which covers under-hood automotive and industrial motor-drive environments. The part is ROHS3 compliant and the lifecycle status is active — no last-time-buy risk for new designs.

Frequently asked questions

Can ISC030N10NM6ATMA1 be used as a drop-in replacement for existing 100V TDSON-8 MOSFETs?

Yes, the PG-TDSON-8 FL footprint is pin-compatible with other Infineon 100 V TDSON-8 MOSFETs. The 3 mOhm Rds(on) is lower than the older ISC030N10NM5, so conduction losses drop. Verify the gate threshold voltage (max 3.3 V at 109 µA) against your gate drive — 5 V logic works, 3.3 V GPIO may need a driver.

How does ISC030N10NM6ATMA1 compare in Rds(on) to the older ISC030N10NM5?

The ISC030N10NM6ATMA1 has a maximum Rds(on) of 3 mOhm at 50 A and 10 V, compared to the ISC030N10NM5 which typically has a slightly higher Rds(on) around 3.2 mOhm. The OptiMOS 6 generation delivers a measurable reduction in conduction loss for the same package and voltage class.

What is the maximum junction temperature and power dissipation for ISC030N10NM6ATMA1?

The maximum junction temperature is 175°C. Power dissipation is rated at 3 W at the board level (Ta) and 208 W at the case (Tc). The board-level limit governs in natural convection; the case rating applies with proper heatsinking.

Where can I buy ISC030N10NM6ATMA1 with immediate stock?

This part is sourced to order through independent distribution. Submit an RFQ for current stock availability and pricing — stock positions change daily, and a quote confirms what is available at the time of request.

What is the recommended gate drive voltage for optimal Rds(on) of ISC030N10NM6ATMA1?

The drive voltage range for achieving the minimum Rds(on) is 8 V to 10 V. The datasheet specifies Rds(on) at 10 V; driving below 8 V will increase on-resistance. A standard 10 V gate drive is recommended for full performance.

Is ISC030N10NM6ATMA1 RoHS compliant?

Yes, it is ROHS3 compliant.