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Infineon Technologies ISC022N10NM6ATMA1 — Analog & Data Acquisition
Infineon Technologies

Infineon ISC022N10NM6ATMA1 N-Channel MOSFET, 100 V

MPNISC022N10NM6ATMA1
End of Life

Infineon OptiMOS™ 6 N-Channel MOSFET, 100 V, 230 A, 2.24 mOhm Rds(on) @ 50 A, 10 V, 91 nC Qg, -55°C to 175°C, PG-TSON-8-3, Surface Mount.

$4.63Ref. price · indicative, final on quote
ISC022N10NM6ATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

ISC022N10NM6ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™ 6
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)8V, 10V
Current - continuous drain (Id) @ 25°C25A (Ta), 230A (Tc)
Power dissipation3W (Ta), 254W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.3V @ 147µA
Rds on (Max) @ id, vgs2.24mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs91 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6880 pF @ 50 V

Product details

100 V OptiMOS™ 6 N-Channel — what this part delivers

The Infineon ISC022N10NM6ATMA1 is a 100 V N-channel MOSFET from the OptiMOS™ 6 family, built on a trench technology that keeps Rds(on) down to 2.24 mOhm typical at 10 V gate drive. That on-resistance at this voltage class is the part's headline — it translates directly into lower conduction loss for a given load current, which shrinks the heatsink or lets you push more current through the same board area. The 230 A continuous drain rating at case temperature (Tc) tells you the silicon can handle high current if you manage the thermal path; the 25 A at ambient (Ta) is the real-world number without a heatsink — plan for a proper thermal interface. The 91 nC gate charge at 10 V is moderate for a 100 V FET, so a standard gate driver with a few amps of peak current will switch it cleanly at moderate frequencies.

Lifecycle and sourcing posture

The ISC022N10NM6ATMA1 carries an Active lifecycle status and is ROHS3 compliant. We source this part through independent distribution channels and can quote it to order against an RFQ.

Frequently asked questions

Is ISC022N10NM6ATMA1 suitable for high-frequency switching?

With a gate charge of 91 nC at 10 V and input capacitance of 6880 pF at 50 V, this MOSFET can be used for switching frequencies up to around 100 kHz with a properly sized gate driver. Above that, gate-drive losses become significant.

Can ISC022N10NM6ATMA1 be used in automotive applications?

However, the evidence does not list AEC-Q101 qualification — verify with the manufacturer if automotive-grade certification is required for your application.