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Infineon Technologies ISC022N10NM6ATMA1 — Discrete Semiconductors

Infineon ISC022N10NM6ATMA1 N-Channel MOSFET, 100 V

MPNISC022N10NM6ATMA1
End of Life

Infineon OptiMOS™ 6 N-Channel MOSFET, 100 V, 230 A, 2.24 mOhm Rds(on) @ 50 A, 10 V, 91 nC Qg, -55°C to 175°C, PG-TSON-8-3, Surface Mount.

$4.63Ref. price · indicative, final on quote
Infineon Technologies ISC022N10NM6ATMA1 datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™ 6
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

ISC022N10NM6ATMA1 specifications
ParameterValue
SeriesOptiMOS™ 6
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)8V, 10V
Current - continuous drain (Id) @ 25°C25A (Ta), 230A (Tc)
Power dissipation3W (Ta), 254W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.3V @ 147µA
Rds on (Max) @ id, vgs2.24mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs91 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6880 pF @ 50 V

Product details

100 V OptiMOS™ 6 N-Channel — what this part delivers

The Infineon ISC022N10NM6ATMA1 is a 100 V N-channel MOSFET from the OptiMOS™ 6 family, built on a trench technology that keeps Rds(on) down to 2.24 mOhm typical at 10 V gate drive. That on-resistance at this voltage class is the part's headline — it translates directly into lower conduction loss for a given load current, which shrinks the heatsink or lets you push more current through the same board area. The 230 A continuous drain rating at case temperature (Tc) tells you the silicon can handle high current if you manage the thermal path; the 25 A at ambient (Ta) is the real-world number without a heatsink — plan for a proper thermal interface.

We source this part through independent distribution channels and can quote it to order against an RFQ.

Frequently asked questions

Is ISC022N10NM6ATMA1 suitable for high-frequency switching?

With a gate charge of 91 nC at 10 V and input capacitance of 6880 pF at 50 V, this MOSFET can be used for switching frequencies up to around 100 kHz with a properly sized gate driver. Above that, gate-drive losses become significant.

Can ISC022N10NM6ATMA1 be used in automotive applications?

However, the evidence does not list AEC-Q101 qualification — verify with the manufacturer if automotive-grade certification is required for your application.