ISC012N04LM6ATMA1

Infineon Technologies · OptiMOS™ 6 Series

Infineon OptiMOS™ 6 N-Channel MOSFET, 40 V Vdss, 1.2 mOhm Rds(on) max @ 50 A, 10 V, 238 A continuous drain (Tc), 64 nC gate charge, PG-TDSON-8 FL package, -55°C to 175°C junction temperature.

Infineon Technologies ISC012N04LM6ATMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

ISC012N04LM6ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™ 6
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C37A (Ta), 238A (Tc)
Power dissipation3W (Ta), 125W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.3V @ 250µA
Rds on (Max) @ id, vgs1.2mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs64 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4600 pF @ 20 V

Technical details

The Infineon ISC012N04LM6ATMA1 is a 40 V N-channel MOSFET from the OptiMOS™ 6 trench family, built for high-efficiency switching in power conversion and motor-drive stages. Its headline figure is a 1.2 mOhm maximum on-resistance at 50 A drain current with 10 V gate drive — that conduction loss stays under 3 W even at 50 A, which keeps the heatsink small in a 48 V bus converter or an automotive 12 V load switch. The 238 A continuous drain rating at case temperature (Tc) tells you the silicon can handle massive current if you pull the heat out through the exposed pad; the 37 A at ambient (Ta) is the real-world limit on a bare PCB without forced air.

Rds(on) and gate drive — matching the driver to the MOSFET

The 1.2 mOhm figure is specified at 10 V gate drive, but the part also lists a 4.5 V drive voltage for minimum on-resistance — that means a logic-level gate driver can still turn it on hard, though the Rds(on) will be higher than the 10 V value. Check the gate charge curve: 64 nC at 10 V means the driver needs to source and sink that charge fast enough to keep switching losses under control at the target frequency. Input capacitance is 4600 pF at 20 V drain-source — a typical 1 A gate driver will charge it in about 30 ns, which is fine for 100 kHz to 200 kHz hard-switched converters. If you are paralleling multiple devices, the 64 nC Qg and 4600 pF Ciss are low enough that gate-resistor tuning is straightforward.

PG-TDSON-8 FL — rework and footprint notes

The 8-PowerTDFN package (PG-TDSON-8 FL) is a 5 mm × 6 mm body with an exposed die pad on the bottom. Rework with hot air is doable: preheat the board to 125°C, hit the pad with 280°C air until the solder reflows, then lift with tweezers. The pad is large enough that alignment marks are clear, and the package has a small index notch. Keep the stencil aperture at 80% of the pad area to avoid solder bridging to the drain pins.

Active lifecycle — no obsolescence clock ticking

The OptiMOS 6 series is Infineon's latest trench MOSFET generation, so a successor is not expected in the near term. For dual-sourcing, Infineon's own portfolio includes other 40 V OptiMOS 6 variants in the same PG-TDSON-8 FL footprint, but the 1.2 mOhm Rds(on) is specific to this part number — verify pin compatibility if cross-referencing.

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