The Infineon ISC027N10NM6ATMA1 is a 100 V N-channel MOSFET from the OptiMOS™ family, with Rds(on) of 2.7 mOhm at 10 V gate drive.
2.7 mOhm at 10 V — the conduction-loss number that matters
Rds(on) of 2.7 mOhm is measured at 50 A, 10 V gate drive. Drive voltage range is 8 V and 10 V for max and min Rds(on).
175 °C junction — rated for the hot environments
The 175 °C max is a proper silicon rating, not a derated number — but reliability at that temperature depends on the thermal resistance of the board design. The PG-TDSON-8 FL package's exposed pad is the primary heat path; the datasheet's 217 W power dissipation at case temperature assumes an infinite heatsink on the pad. In practice, derate based on your PCB's thermal impedance.
Active and ROHS3 — no lifecycle surprises
For dual-sourcing or a pin-compatible second source, the BSC027N10NS5 from Infineon's same OptiMOS 5 family is a common cross-shop candidate — same 100 V, 2.7 mOhm class, same PG-TDSON-8 footprint — though always verify the gate charge and switching characteristics against your specific drive conditions.
