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ISC011N06LM5ATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS™ N-Channel MOSFET, 60 V Vdss, 1.15 mOhm Rds(on) max @ 50 A, 10 Vgs, 288 A continuous drain (Tc), 170 nC Qg, 8-PowerTDFN (PG-TDSON-8-17), -55°C to 175°C TJ.

Infineon Technologies ISC011N06LM5ATMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

[ORIGINAL SEALED] [PRE-SHIP HD PHOTOS] [30D WARRANTY · COC] [TRACKED DAP/DDP]

Technical specifications

ISC011N06LM5ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C37A (Ta), 288A (Tc)
Power dissipation3W (Ta), 188W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.3V @ 116µA
Rds on (Max) @ id, vgs1.15mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs170 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds11000 pF @ 30 V

Technical details

Gate drive and switching considerations

The ISC011N06LM5ATMA1: The gate charge is specified at 170 nC maximum with a 10 V gate drive. The input capacitance (Ciss) is 11000 pF at 30 V Vds. The gate-source voltage is rated to ±20 V.

The 175°C maximum junction temperature is the boundary for the safe operating area and the Rds(on) derating. The storage temperature range matches the operating range.

The ISC011N06LM5ATMA1 is supplied in an 8-PowerTDFN package, the Infineon PG-TDSON-8-17 footprint. This is a surface-mount, thermally enhanced package with a large exposed drain pad on the bottom.

ISC011N06LM5ATMA1
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