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Infineon Technologies ISC011N06LM5ATMA1 — Analog & Data Acquisition
Infineon Technologies

ISC011N06LM5ATMA1 OptiMOS™ N-Channel MOSFET, 60 V, 1.15 mOhm

MPNISC011N06LM5ATMA1
End of Life

Infineon OptiMOS™ N-Channel MOSFET, 60 V Vdss, 1.15 mOhm Rds(on) max @ 50 A, 10 Vgs, 288 A continuous drain (Tc), 170 nC Qg, 8-PowerTDFN (PG-TDSON-8-17), -55°C to 175°C TJ.

$3.72Ref. price · indicative, final on quote
ISC011N06LM5ATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

ISC011N06LM5ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C37A (Ta), 288A (Tc)
Power dissipation3W (Ta), 188W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.3V @ 116µA
Rds on (Max) @ id, vgs1.15mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs170 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds11000 pF @ 30 V

Product details

Gate drive and switching considerations

The ISC011N06LM5ATMA1: The gate charge is specified at 170 nC maximum with a 10 V gate drive. The drive voltage range spans 4.5 V to 10 V for the Rds(on) specification. The input capacitance (Ciss) is 11000 pF at 30 V Vds. The gate-source voltage is rated to ±20 V.

Temperature grade and environment

The operating junction temperature range spans -55°C to 175°C. The 175°C maximum junction temperature is the boundary for the safe operating area and the Rds(on) derating. The storage temperature range matches the operating range.

Package and footprint

The ISC011N06LM5ATMA1 is supplied in an 8-PowerTDFN package, the Infineon PG-TDSON-8-17 footprint. This is a surface-mount, thermally enhanced package with a large exposed drain pad on the bottom. The part is offered in Tape & Reel (TR) and Cut Tape (CT) packaging options.

Lifecycle and compliance

It is ROHS3 compliant, so it meets the latest EU restriction-of-hazardous-substances directive for lead-free soldering processes.

Frequently asked questions

What is the Rds(on) of ISC011N06LM5ATMA1 at 10 V gate drive?

The maximum Rds(on) is 1.15 mOhm at a drain current of 50 A with a 10 V gate-source voltage. This is the specified condition for the lowest conduction loss.

What is the maximum continuous drain current for ISC011N06LM5ATMA1?

The continuous drain current is rated at 37 A at 25°C ambient (still air) and 288 A at 25°C case temperature. The practical current in a real design depends on the thermal management — the 288 A figure requires a heatsink or a well-thermalized PCB.