Gate drive and switching considerations
The ISC011N06LM5ATMA1: The gate charge is specified at 170 nC maximum with a 10 V gate drive. The input capacitance (Ciss) is 11000 pF at 30 V Vds. The gate-source voltage is rated to ±20 V.
The 175°C maximum junction temperature is the boundary for the safe operating area and the Rds(on) derating. The storage temperature range matches the operating range.
The ISC011N06LM5ATMA1 is supplied in an 8-PowerTDFN package, the Infineon PG-TDSON-8-17 footprint. This is a surface-mount, thermally enhanced package with a large exposed drain pad on the bottom.
