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Infineon Technologies IRF9 Discrete Semiconductors Series

11 variants · Infineon Technologies

About the Infineon Technologies IRF9 Discrete Semiconductors Series

The Infineon Technologies IRF9 Discrete Semiconductors Series series groups 11 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common FET type of P-Channel. Variants differ by mounting, gate charge (Qg) (Max) @ vgs and rds on (Max) @ id, vgs, so you can match the exact mounting your application requires using the selection guide below. The range mixes active and legacy part numbers, so you can source both current Infineon Technologies IRF9 Discrete Semiconductors Series variants and discontinued ones from a single page.

Select a variant by

Mounting
Surface Mount · Through Hole
Gate charge (Qg) (Max) @ vgs
31 nC @ 10 V · 60 nC @ 10 V · 97 nC @ 10 V · 110 nC @ 10 V
Rds on (Max) @ id, vgs
117mOhm @ 11A, 10V · 117mOhm @ 14A, 10V · 580mOhm @ 11 A, 10 V · 940mOhm @ 6.5 A, 10 V
Vgs
±20 V · ±20V
Case
TO-220-3 · TO-262-3 Long Leads, I²Pak, TO-262AA · TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input capacitance (Ciss) (Max) @ vds
1300 pF @ 25 V · 1450 pF @ 25 V
Operating temperature
-55°C ~ 150°C (TJ) · -55°C~150°C(TJ)
Package
Tape & Reel (TR) · Tape & Reel (TR) Cut Tape (CT) · Tube

Shared specifications

FET type
P-Channel

Variant comparison

ParameterIRF9230IRF9233IRF9133IRF9240IRF9540NLIRF9540NLPBF
MountingThrough HoleThrough HoleThrough HoleThrough HoleThrough HoleThrough Hole
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V60 nC @ 10 V97 nC @ 10 V110 nC @ 10 V
Rds on (Max) @ id, vgs940mOhm @ 6.5 A, 10 V580mOhm @ 11 A, 10 V117mOhm @ 11A, 10V117mOhm @ 14A, 10V
Vgs±20 V±20 V±20V±20V
CaseTO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AA
Input capacitance (Ciss) (Max) @ vds1300 pF @ 25 V1450 pF @ 25 V
Operating temperature-55°C ~ 150°C (TJ)-55°C~150°C(TJ)
PackageTubeTube

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All variants