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Infineon Technologies IRF9133 — Discrete Semiconductors
Infineon Technologies

IRF9133 P-Channel MOSFET, 80 V, 10 A, 88 W, Active

MPNIRF9133
Active

IRF9133, International Rectifier, P-Channel HEXFET Power MOSFET, 80 V drain-source voltage, 10 A continuous drain current, 88 W power dissipation, Through Hole package, Active lifecycle.

$5.06Ref. price · indicative, final on quote
IRF9133 datasheet
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF9133 Technical Specifications
ParameterValue
FET typeP-Channel
Mounting_typeThrough Hole
Power_w88.0
Package_typeBulk
Product_statusActive
Supply_voltage_v80.0
Switching_current_a10.0

Product details

The IRF9133 is a P-Channel HEXFET power MOSFET from International Rectifier, rated for 80 V drain-source breakdown and 10 A continuous drain current. That 88 W power dissipation ceiling tells you this is a TO-220-class device sized for medium-current high-side switching in automotive and industrial loads — think reverse-battery protection, load switches, and motor-bridge high-side legs where an N-Channel would need a charge pump.

Through-hole mounting — rework and thermal reality

Through-hole mounting means the tab solders into a plated through-hole on the board, giving a direct thermal path to the copper plane. Rework is straightforward with a soldering iron — no hot-air profile needed — but the lead bend and hole diameter must match the BOM footprint.

Frequently asked questions

What is IRF9133's listed power dissipation and voltage rating?

The IRF9133 is rated for 88 W power dissipation at 25 °C case temperature, with an 80 V drain-source breakdown voltage and 10 A continuous drain current. These are the key ratings that define its safe operating area for high-side switching applications.

Is IRF9133 suitable for automotive applications?

Yes, the part is described as an AUTOMOTIVE HEXFET P-Channel power MOSFET. This indicates it is designed and qualified for automotive-grade environments, though the specific AEC-Q101 certification level is not detailed in the listing. For under-hood or chassis-domain deployment, verify the exact qualification grade against the full datasheet.