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Infineon Technologies IRF9233 — Discrete Semiconductors

IRF9233 P-Channel MOSFET, 150V, 5.5A, TO-204AE

MPNIRF9233
Active

Infineon Technologies HEXFET® P-Channel MOSFET, IRF9233, 150V, 5.5A, 75W, TO-204AE, Through Hole, Bulk.

$2.00Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRF9233 specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
MountingThrough Hole
Power75.0
Fet featureStandard
Package_typeBulk
StatusActive
Supply voltage150.0
Switching current5.5

Product details

150V P-Channel MOSFET in a TO-204AE through-hole package

The IRF9233 is a 150V, 5.5A P-Channel MOSFET from Infineon's HEXFET series, housed in a TO-204AE through-hole package. The 150V drain-source breakdown voltage gives headroom on a 48V or 72V nominal rail, while the 5.5A continuous drain current sets the load budget for a mid-power P-channel switch.

P-channel polarity and the load position decision

As a P-Channel device, the IRF9233 switches the high side of the load with a gate voltage referenced to the source. This simplifies the gate drive in applications where the source is tied to the positive rail and the load connects to ground — no charge pump or bootstrap is needed, unlike an N-channel high-side switch. The 75W power dissipation rating defines the thermal budget for the TO-204AE package. With a 5.5A drain current, the on-resistance must be kept low enough to stay within this dissipation limit at the operating junction temperature; the datasheet's Rds(on) vs temperature curve is the key derating tool.

Frequently asked questions

What is IRF9233's power dissipation rating?

The IRF9233 is rated for 75W power dissipation, which sets the thermal budget for the TO-204AE package at the operating junction temperature.