Infineon CoolSiC™ series, N-channel SiCFET, IMZ120R090M1HXKSA1, 1200 V Vdss, 26 A continuous drain, 117 mOhm Rds(on), TO-247-4 through-hole package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolSiC™ |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 1200 V |
| Drive voltage (Max rds on, min rds on) | 15V, 18V |
| Current - continuous drain (Id) @ 25°C | 26A (Tc) |
| Power dissipation | 115W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | +23V, -7V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-4 |
| Vgs(th) (Max) @ id | 5.7V @ 3.7mA |
| Rds on (Max) @ id, vgs | 117mOhm @ 8.5A, 18V |
| Gate charge (Qg) (Max) @ vgs | 21 nC @ 18 V |
| Input capacitance (Ciss) (Max) @ vds | 707 pF @ 800 V |
Input capacitance Ciss is 707 pF at 800 V Vds. The 117 mOhm Rds(on) at 8.5 A and 18 V is the number to use for conduction-loss calculations at full load.
The TO-247-4 package is through-hole, so it mounts into a PCB or a heatsink with two screws and a soldering iron. The fourth pin is the Kelvin-source connection.
The maximum on-resistance is 117 mOhm at 8.5 A drain current with an 18 V gate drive.
The TO-247-4 package has four pins: pin 1 is gate, pin 2 is source, pin 3 is the Kelvin-source connection, and pin 4 is the auxiliary source. The metal tab is the drain.
There is no direct pin-compatible second source listed for this part. The CoolSiC™ family includes other 1200 V devices in the same TO-247-4 footprint, but gate charge and Rds(on) differ — verify the specific rating against your design before substituting.