EPC8010

MPN EPC8010

Active Spot Stock · 24-48h Dispatch 100% Original Sealed

GANFET N-CH 100V 4A DIE

In Stock: 20,481 pcs

Ready for Immediate Dispatch (24-48h)

MOQ: 1 pcs Tape & Reel (TR); Cut Tape (CT)

Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)

Dispatch: Shenzhen / HK

Unit Price (USD)

$2.14 / pc

Direct Purchase Ready

Volume Pricing Breaks Confirmed upon quotation

1+ pcs

$2.14

10+ pcs

$1.93

30+ pcs

$1.75

100+ pcs

$1.58

500+ pcs

$1.48

1,000+ pcs

$1.39

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$2.14 / ea

20,481 in stock — maximum per order · 3–4 days lead time

$1.93 / ea from 10 pcs

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100% Original Sealed 45x Microscope QC 30-Day Warranty · COC USD T/T & PI · DAP/DDP

[SPEC] Essential Parameters Snapshot Full Specifications (15)

Package / Case Die

Output / Current 100 V

Full Technical Specifications

15 Parameters

EPC8010 specifications
Parameter / Attribute	Specification / Value
Series	eGaN®
FET type	N-Channel
Mounting	Surface Mount
Drain to source voltage	100 V
Drive voltage (Max rds on, min rds on)	5V
Current - continuous drain (Id) @ 25°C	4A (Ta)
Operating temperature	-40°C ~ 150°C (TJ)
Package	Tape & Reel (TR); Cut Tape (CT)
Vgs	+6V, -4V
Technology	GaNFET (Gallium Nitride)
Case	Die
Vgs(th) (Max) @ id	2.5V @ 250µA
Rds on (Max) @ id, vgs	160mOhm @ 500mA, 5V
Gate charge (Qg) (Max) @ vgs	0.48 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds	55 pF @ 50 V

Series Sibling Variants

EPC eGaN® Series Models

Sibling variants, package options, and speed/density grades in this EPC semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

EPC2001C

GANFET N-CH 100V 36A DIE OUTLINE

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EPC2012C

GANFET N-CH 200V 5A DIE OUTLINE

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EPC2014C

GANFET N-CH 40V 10A DIE OUTLINE

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EPC2015C

GANFET N-CH 40V 53A DIE

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