EPC2215
MPNEPC2215
Active
GAN TRANS 200V 8MOHM BUMPED DIE
$6.15Ref. price · indicative, final on quote
PackagingDie
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 5V |
| Current - continuous drain (Id) @ 25°C | 32A (Ta) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +6V, -4V |
| Technology | GaNFET (Gallium Nitride) |
| Case | Die |
| Vgs(th) (Max) @ id | 2.5V @ 6mA |
| Rds on (Max) @ id, vgs | 8mOhm @ 20A, 5V |
| Gate charge (Qg) (Max) @ vgs | 17.7 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 1790 pF @ 100 V |