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EPC2031 — Memory (DRAM / SRAM / Flash / EEPROM)

EPC2031

MPNEPC2031
Active

GANFET NCH 60V 31A DIE

$7.02Ref. price · indicative, final on quote
PackagingDie
RoHSROHS3 Compliant
SerieseGaN®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

EPC2031 specifications
ParameterValue
SerieseGaN®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Current - continuous drain (Id) @ 25°C31A (Ta)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyGaNFET (Gallium Nitride)
CaseDie
Vgs(th) (Max) @ id2.5V @ 15mA
Rds on (Max) @ id, vgs2.6mOhm @ 30A, 5V
Gate charge (Qg) (Max) @ vgs17 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 300 V