GAN TRANS ASYMMETRICAL HALF BRID
$8.75Ref. price · indicative, final on quote
PackagingDie
StockContact for availability
MOQ1 pcs
- 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
- Date & lot codes on quoteStated per line before you commit; label photos on request.
- MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
- PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.
Specifications
| Parameter | Value |
|---|---|
| Series | eGaN® |
| Mounting type | Surface Mount |
| Drain to source voltage | 80V |
| Current - continuous drain (Id) @ 25°C | 9.5A, 38A |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | GaNFET (Gallium Nitride) |
| Configuration | 2 N-Channel (Half Bridge) |
| Case | Die |
| Vgs(th) (Max) @ id | 2.5V @ 2.5mA, 2.5V @ 10mA |
| Rds on (Max) @ id, vgs | 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V |
| Gate charge (Qg) (Max) @ vgs | 2.5nC @ 5V, 10nC @ 5V |
| Input capacitance (Ciss) (Max) @ vds | 300pF @ 40V, 1100pF @ 40V |