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GANFET N-CH 40V 4A DIE
In Stock: 38 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d)
Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$7.03 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$7.03
10+ pcs
$6.06
30+ pcs
$5.49
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[SPEC] Essential Parameters Snapshot Full Specifications (15)
Package / Case Die
Output / Current 40 V
Full Technical Specifications
15 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| Series | eGaN® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 5V |
| Current - continuous drain (Id) @ 25°C | 4A (Ta) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +6V, -4V |
| Technology | GaNFET (Gallium Nitride) |
| Case | Die |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 110mOhm @ 500mA, 5V |
| Gate charge (Qg) (Max) @ vgs | 0.45 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 52 pF @ 20 V |
Series Sibling Variants
EPC eGaN® Series Models
Sibling variants, package options, and speed/density grades in this EPC semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.
EPC2001C
GANFET N-CH 100V 36A DIE OUTLINE
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EPC2012C
GANFET N-CH 200V 5A DIE OUTLINE
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EPC2014C
GANFET N-CH 40V 10A DIE OUTLINE
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EPC2015C
GANFET N-CH 40V 53A DIE
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EPC2016C
GANFET N-CH 100V 18A DIE
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EPC2019
GANFET N-CH 200V 8.5A DIE
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EPC8004
Verified Allocation