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YAGEO XSEMI XP2P052N

YAGEO XSEMI XP2P052N

MPNXP2P052N
Active

MOSFET P-CH 20V 4A SOT23

$0.42Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesXP2P052
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

XP2P052N specifications
ParameterValue
SeriesXP2P052
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C4A (Ta)
Power dissipation1.25W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs52mOhm @ 4A, 4.5V
Gate charge (Qg) (Max) @ vgs14.4 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1440 pF @ 10 V