YAGEO XSEMI XP6NA1R7CMT
MPNXP6NA1R7CMT
Active
FET N-CH 60V 41.6A 190A PMPAK
$6.83Ref. price · indicative, final on quote
Packaging8-PowerLDFN
RoHSROHS3 Compliant
SeriesXP6NA1R7C
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | XP6NA1R7C |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 41.6A (Ta), 190A (Tc) |
| Power dissipation | 5W (Ta), 104W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerLDFN |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.7mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 160 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 8800 pF @ 50 V |