YAGEO XSEMI XP3NA2R4MT
MPNXP3NA2R4MT
Active
FET N-CH 30V 36.5A 118A PMPAK
$2.15Ref. price · indicative, final on quote
Packaging8-PowerLDFN
RoHSROHS3 Compliant
SeriesXP3NA2R4
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | XP3NA2R4 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 36.5A (Ta), 118A (Tc) |
| Power dissipation | 5W (Ta), 52W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerLDFN |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 2.4mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 65.6 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 5600 pF @ 15 V |