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Vishay SI2387DS-T1-GE3 — Logic ICs

Vishay SI2387DS-T1-GE3

MPNSI2387DS-T1-GE3
End of Life

P-CHANNEL -80V SOT-23, 164 M @ 1

$0.5Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SI2387DS-T1-GE3 Technical Specifications
ParameterValue
SeriesTrenchFET® Gen IV
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C2.1A (Ta), 3A (Tc)
Power dissipation1.3W (Ta), 2.5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs164mOhm @ 2.1A, 10V
Gate charge (Qg) (Max) @ vgs10.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds395 pF @ 40 V