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Vishay SI2387DS-T1-GE3 — Discrete Semiconductors

Vishay SI2387DS-T1-GE3 P-Channel MOSFET, 80 V, 2.1 A, SOT-23

MPNSI2387DS-T1-GE3
End of Life

Vishay TrenchFET® Gen IV P-Channel MOSFET, SI2387DS-T1-GE3, 80 Vdss, 2.1 A continuous drain, 164 mOhm Rds(on) at 10 V, SOT-23-3 surface mount, Tape & Reel.

$0.5Ref. price · indicative, final on quote
Vishay SI2387DS-T1-GE3 datasheet (PDF)
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SI2387DS-T1-GE3 specifications
ParameterValue
SeriesTrenchFET® Gen IV
FET typeP-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C2.1A (Ta), 3A (Tc)
Power dissipation1.3W (Ta), 2.5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs164mOhm @ 2.1A, 10V
Gate charge (Qg) (Max) @ vgs10.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds395 pF @ 40 V

Product details

The SI2387DS-T1-GE3: Gate charge is 10.2 nC at 10 V, and input capacitance is 395 pF at 40 V Vds — these numbers tell you the switching speed is limited more by the gate-drive source resistance than by the FET itself; a 10-ohm driver delivers sub-100 ns rise times.

SOT-23-3 footprint and board integration

The SOT-23-3 (TO-236) package occupies a 2.9 mm × 1.3 mm footprint — the drain is the centre pin, source and gate on the outer pins. The exposed die attach pad is the drain terminal; the PCB copper area under the pad sets the thermal resistance to ambient. Drive voltage range is 4.5 V minimum for the rated on-resistance, though the 10 V figure gives the lowest Rds(on); at 4.5 V the on-resistance will be higher than the 164 mOhm spec — check the typical curve if driving from a 3.3 V logic rail.

Frequently asked questions

What is the closest functional second-source for the SI2387DS-T1-GE3?

The SI2308BDS-T1-BE3 is an N-channel peer in the same SOT-23-3 package, but it is N-channel — it cannot drop into a P-channel high-side load-switch circuit without rewiring the gate drive and source connections.

What compliance documentation does Vishay provide for the SI2387DS-T1-GE3?

The part is RoHS3 compliant. Vishay typically provides a material declaration sheet on request.