The SI2387DS-T1-GE3: Gate charge is 10.2 nC at 10 V, and input capacitance is 395 pF at 40 V Vds — these numbers tell you the switching speed is limited more by the gate-drive source resistance than by the FET itself; a 10-ohm driver delivers sub-100 ns rise times.
SOT-23-3 footprint and board integration
The SOT-23-3 (TO-236) package occupies a 2.9 mm × 1.3 mm footprint — the drain is the centre pin, source and gate on the outer pins. The exposed die attach pad is the drain terminal; the PCB copper area under the pad sets the thermal resistance to ambient. Drive voltage range is 4.5 V minimum for the rated on-resistance, though the 10 V figure gives the lowest Rds(on); at 4.5 V the on-resistance will be higher than the 164 mOhm spec — check the typical curve if driving from a 3.3 V logic rail.