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Vishay SIHD14N60ET1-GE3 — Discrete Semiconductors

Vishay SIHD14N60ET1-GE3 N-Channel MOSFET, 600 V, 13 A, DPAK

MPNSIHD14N60ET1-GE3
End of Life

Vishay E series SIHD14N60ET1-GE3, N-Channel MOSFET, 600 V Vdss, 13 A Id, 309 mOhm Rds(on) at 10 V, 64 nC Qg, DPAK surface mount, -55 to 150 °C.

$2.21Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
SeriesE
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SIHD14N60ET1-GE3 specifications
ParameterValue
SeriesE
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13A (Tc)
Power dissipation147W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs309mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs64 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1205 pF @ 100 V

Product details

It comes in a surface-mount DPAK (TO-252-3) package, making it suitable for high-voltage switching applications such as AC-DC converters, power factor correction stages, and motor drives where board space is constrained. The device supports a gate drive voltage of 10 V for minimum on-resistance, with a maximum Rds(on) of 309 mOhm at 7 A and 10 V.

Ratings that drive the design — Rds(on), gate charge, and thermal margin

The 309 mOhm Rds(on) at 7 A and 10 V is the figure to use for conduction-loss calculations at operating temperature — the 25 °C value in the datasheet will roughly double at 125 °C junction, so budget accordingly. Input capacitance is 1205 pF at 100 V Vds, a moderate value that doesn't demand an aggressive gate-drive stage but still benefits from a low-impedance path to avoid ringing. Maximum power dissipation is 147 W at case temperature, though real-world dissipation will be limited by the PCB's ability to sink heat through the DPAK's exposed pad. The maximum gate-source voltage is ±30 V, which is generous for a 600 V part and reduces the risk of oxide breakdown during transients.

Lifecycle and compliance — active status with no LTB risk

The part is RoHS compliant, as indicated by the GE3 suffix.

Frequently asked questions

Is the SIHD14N60ET1-GE3 RoHS compliant?

Yes, the SIHD14N60ET1-GE3 is RoHS compliant, indicated by the GE3 suffix in the order code.

What is the Rds(on) of SIHD14N60ET1-GE3?

The maximum Rds(on) is 309 mOhm at 7 A drain current and 10 V gate drive.

What is the equivalent replacement for SIHD14N60ET1-GE3?

The SIHD14N60ET4-GE3 and SIHD14N60ET5-GE3 are functionally identical parts from the same E series, with the same 600 V, 13 A, and 309 mOhm ratings, differing only in packaging options (Tape & Reel vs Cut Tape vs Digi-Reel). The through-hole variant is the SIHA14N60E-GE3 in a TO-220 package.