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Vishay SQJA12EP-T1_GE3 — Discrete Semiconductors

SQJA12EP-T1_GE3 N-Channel MOSFET, 100 V, 8.6 mΩ Rds(on)

MPNSQJA12EP-T1_GE3
End of Life

Vishay SQJA12EP-T1_GE3 N-Channel MOSFET, 100 V drain-source, 8.6 mOhm max Rds(on) at 10 A, 10 V gate drive, 49.1 nC gate charge, -55 to 125°C operating temperature.

$1.81Ref. price · indicative, final on quote
Vishay SQJA12EP-T1_GE3 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SQJA12EP-T1_GE3 specifications
ParameterValue
FET typeN-Channel
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Operating temperature-55°C ~ 125°C
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs8.6mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs49.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3635 pF @ 25 V

Product details

100 V, 8.6 mΩ — what this N-channel MOSFET delivers

The SQJA12EP-T1_GE3: That Rds(on) figure is the headline for a switching design: at 10 A the conduction loss stays under 0.86 W, which keeps the thermal budget manageable in a compact footprint. The 100 V rating gives headroom for 12 V, 24 V, or even 48 V rails — typical for automotive, industrial, and telecom DC-DC converters, motor drives, and load switches.

Input capacitance Ciss is 3635 pF at 25 V.

That means this part is suitable for under-hood automotive, outdoor industrial enclosures, and other environments where the junction sees wide thermal swings.

Frequently asked questions

What is the Rds(on) of SQJA12EP-T1_GE3?

Maximum on-resistance is 8.6 mΩ at 10 A drain current and 10 V gate drive.

Can SQJA12EP-T1_GE3 be used for 12V systems?

Yes. With a 100 V drain-source rating and 10 V gate drive for minimum Rds(on), this MOSFET is well suited for 12 V automotive or industrial switching applications. The 8.6 mΩ Rds(on) keeps conduction losses low at typical 12 V load currents.