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Toshiba Semiconductor TPW1R005PL,L1Q

Toshiba Semiconductor TPW1R005PL,L1Q

MPNTPW1R005PL,L1Q
End of Life

MOSFET N-CH 45V 300A 8DSOP

$3.0Ref. price · indicative, final on quote
Packaging8-PowerWDFN
RoHSRoHS Compliant
SeriesU-MOSIX-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TPW1R005PL,L1Q specifications
ParameterValue
SeriesU-MOSIX-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage45 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C300A (Tc)
Power dissipation960mW (Ta), 170W (Tc)
Operating temperature175°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerWDFN
Vgs(th) (Max) @ id2.4V @ 1mA
Gate charge (Qg) (Max) @ vgs122 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9600 pF @ 22.5 V