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Toshiba Semiconductor TPN6R003NL,LQ

Toshiba Semiconductor TPN6R003NL,LQ

MPNTPN6R003NL,LQ
End of Life

MOSFET N CH 30V 27A 8TSON-ADV

$0.86Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSRoHS Compliant
SeriesU-MOSVIII-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TPN6R003NL,LQ specifications
ParameterValue
SeriesU-MOSVIII-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C27A (Tc)
Power dissipation700mW (Ta), 32W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.3V @ 200µA
Rds on (Max) @ id, vgs6mOhm @ 13.5A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1400 pF @ 15 V