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Toshiba Semiconductor TK42A12N1,S4X

Toshiba Semiconductor TK42A12N1,S4X

MPNTK42A12N1,S4X
End of Life

MOSFET N-CH 120V 42A TO220SIS

$1.49Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesU-MOSVIII-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TK42A12N1,S4X specifications
ParameterValue
SeriesU-MOSVIII-H
FET typeN-Channel
MountingThrough Hole
Drain to source voltage120 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C42A (Tc)
Power dissipation35W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs9.4mOhm @ 21A, 10V
Gate charge (Qg) (Max) @ vgs52 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3100 pF @ 60 V