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Toshiba Semiconductor TK40A06N1,S4X

Toshiba Semiconductor TK40A06N1,S4X

MPNTK40A06N1,S4X
End of Life

MOSFET N-CH 60V 40A TO220SIS

$1.23Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesU-MOSVIII-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TK40A06N1,S4X specifications
ParameterValue
SeriesU-MOSVIII-H
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation30W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 300µA
Rds on (Max) @ id, vgs10.4mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1700 pF @ 30 V