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Toshiba Semiconductor TK35S04K3L(T6L1,NQ

TK35S04K3L(T6L1,NQ - Toshiba Semiconductor

MPNTK35S04K3L(T6L1,NQ
End of Life

MOSFET N-CH 40V 35A DPAK

$1.36Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesU-MOSIV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TK35S04K3L(T6L1,NQ specifications
ParameterValue
SeriesU-MOSIV
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C35A (Ta)
Power dissipation58W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 1mA
Rds on (Max) @ id, vgs10.3mOhm @ 17.5A, 10V
Gate charge (Qg) (Max) @ vgs28 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1370 pF @ 10 V