60 V, 6 A N-channel in a 6-TSOP-F — what it means for the BOM
The SSM6K809R,LXHF is an automotive-grade N-channel MOSFET from Toshiba, built on the U-MOSVIII-H trench process.
Rds(on) and gate charge — the switching trade-off
That is the conduction loss floor: at 5 A the dissipation is 0.9 W, well within the 1.5 W package limit at 25°C ambient. The drive voltage range (4 V minimum for rated Rds(on), 10 V for the full enhancement) means a standard 12 V automotive gate driver rail saturates the FET cleanly. Gate charge is 9.3 nC at 10 V — a modest number that keeps the switching transition fast. For a 100 kHz PWM solenoid drive, the gate-drive power is roughly Qg × Vgs × fsw = 9.3 nC × 10 V × 100 kHz = 9.3 mW, negligible in the thermal budget. The 550 pF input capacitance at 10 V drain-source confirms the gate is easy to drive with a standard totem-pole stage.
Package and footprint — 6-TSOP-F surface mount
The 6-TSOP-F package (6-SMD with flat leads) is a small-outline, low-profile body with a 0.95 mm pitch. The flat leads reduce the solder-joint stress compared to a gull-wing, and the exposed pad at the bottom of the package pulls heat into the PCB copper. A 1-square-inch copper pad on the top layer drops the junction-to-ambient thermal resistance below 80°C/W, letting the part run at 1.5 W without a heatsink.
Sourcing and lifecycle — active, no second-source on record
Sourced through independent distribution against an RFQ. No stock-holding claim — this is a quoted-to-order line.