Toshiba Semiconductor SSM3J143TU,LXHF
MPNSSM3J143TU,LXHF
End of Life
SMOS P-CH VDSS:-20V VGSS:-8/+6V
$0.44Ref. price · indicative, final on quote
Packaging3-SMD, Flat Leads
RoHSROHS3 Compliant
SeriesU-MOSVI
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVI |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 5.5A (Ta) |
| Power dissipation | 500mW (Ta) |
| Operating temperature | 150°C |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +6V, -8V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | 3-SMD, Flat Leads |
| Vgs(th) (Max) @ id | 1V @ 1mA |
| Rds on (Max) @ id, vgs | 29.8mOhm @ 3A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 12.8 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 840 pF @ 10 V |