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Toshiba Semiconductor RN2105,LF(CT — Microcontrollers & Processors (MCU / MPU / DSP)

RN2105,LF(CT RN2105 LF CT PNP Pre-Biased Transistor

MPNRN2105,LF(CT
End of Life

Toshiba RN2105 LF CT, PNP pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 200 MHz transition frequency, SC-75 SOT-416 surface-mount package.

$0.2Ref. price · indicative, final on quote
PackagingSC-75, SOT-416
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RN2105,LF(CT specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max100 mW
Frequency200 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-75, SOT-416
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Product details

Pre-biased PNP — what the integrated resistors save you

The RN2105,LF(CT: The Toshiba RN2105 LF CT is a PNP pre-biased transistor in a SC-75 SOT-416 surface-mount package. It integrates a 2.2 kOhms base resistor (R1) and a 47 kOhms emitter-base resistor (R2), which set the turn-on threshold and provide a defined off-state, eliminating two external passives from the BOM. The 200 MHz transition frequency means it can handle signal-path switching up into the low RF range, not just DC load switching.

Active, ROHS3, and the SC-75 footprint

Maximum power dissipation is 100 mW, which sets the thermal budget for continuous operation.

Frequently asked questions

Is the RN2105 LF CT RoHS compliant?

Yes, it is listed as ROHS3 compliant.

What is the difference between RN2105 and RN2106?

The RN2106 uses different resistor values, which shifts the input threshold and bias conditions. Check the respective datasheets for the exact RN2106 resistor values to confirm fit for your drive circuit.